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Siウェーハ表面層のマイクロ波光導電周波数応答による評価 Si Wafer Subsurface Characterization Using Microwave Photoconductivity Frequency Responses 安野, 勇樹 Anno, Yuuki 荻田, 陽一郎 Ogita, Yo-ichiro Si wafer Subsurface carrier lifetime Subsurface characterization H2+ ion implantation Polishing pressure application/pdf Photoconductivity frequency responses (PCF) method with blue laser photoexcitation has been developed for evaluating surface and subsurface property. Carrier lifetimes obtained from PCF measurements for silicon wafers has revealed to correspond to that determined from surface and subsurface lifetimes,due to comparing with lifetime by Bi-surface photoconductivity decay. PCF photoconductivity amplitude reflected nearbysurface damage induced by H2+ ion implantation. PCF reflected microroughness and subsurface damage induced by chemomechanical polishing. 神奈川工科大学 2003-03-20 jpn departmental bulletin paper VoR https://doi.org/10.34411/00000930 http://hdl.handle.net/10368/939 https://kait.repo.nii.ac.jp/records/937 10.34411/00000930 AN10074179 09161902 神奈川工科大学研究報告.B,理工学編 27 1 5 https://kait.repo.nii.ac.jp/record/937/files/kkb-027-001.pdf application/pdf 2.1 MB 2010-02-03