{"created":"2023-05-15T12:25:41.784147+00:00","id":1008,"links":{},"metadata":{"_buckets":{"deposit":"73c04ee1-d722-4605-bb5f-ab7e460516bc"},"_deposit":{"created_by":4,"id":"1008","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"1008"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00001008","sets":["2:16:42:121"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"45","bibliographicPageStart":"43","bibliographicVolumeNumber":"31","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Chemical vapor deposition (CVD) diamond etching was investigated in reactive ion etching system using MgO sintered ceramic electrode. MgO electrode system was consisted of two parallel disks with 7cm in diameter. The RF power (13.56MHz) was fixed to be constant as 100W. O2 was supplied to the chamber via mass flow controller. The flow rate, total pressure, and electrode distance were 20sccm, 10Pa, and 2cm, respectively. The polycrystalline diamond films of approximately 14μm thickness on silicon wafers (5x5mm) were used as samples. The diamond etching rate increased about 50 percent when stainless steel electrode was substituted for MgO electrode. The increase of etching rate is probably due to increase of the electron density.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00001001","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三栖, 貴行","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"柳井, 潤","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"後藤, みき","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荒井, 俊彦","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Misu, Takayuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Yanai, Jun","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Goto, Miki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Arai, Toshihiko","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-031-006.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-031-006.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/1008/files/kkb-031-006.pdf"},"version_id":"aa69bf3c-8a3a-4f00-88d7-37d4fc3df8a5"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"diamond etching","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"reactive ion etching","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"O2 plasma","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"MgO electrode","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"MgO電極を用いたCVDダイヤモンドの反応性イオンエッチング","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"MgO電極を用いたCVDダイヤモンドの反応性イオンエッチング","subitem_title_language":"ja"},{"subitem_title":"Reactive ion etching of CVD diamond using MgO electrodes","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["121"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"1008","relation_version_is_last":true,"title":["MgO電極を用いたCVDダイヤモンドの反応性イオンエッチング"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:14:49.977399+00:00"}