{"created":"2023-05-15T12:25:42.814244+00:00","id":1024,"links":{},"metadata":{"_buckets":{"deposit":"b29d1d1a-9b4a-4d35-9584-0b46e090e8b5"},"_deposit":{"created_by":4,"id":"1024","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"1024"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00001024","sets":["2:16:42:122"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"7","bibliographicPageStart":"1","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have studied thet wo types of impurity electron states in magnetic semiconductors as EuO; the donor electron state introduced by Gd-doped and the trapped electron state on O-ion vacancy. The conduction electrons are strongly affected by magnetic order, i.e. the magnetic field and temperature, through the s -f exchange interaction. The effect of magnetic order on the bound electron will be different from that on the conduction states. In this study, we studied two specific cases, the paramagnetic state and the completely ferromagnetic case. We also discuss the mechanism of metal-insulator transition in Eu-rich EuO.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00001017","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 正雄","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Takahashi, Masao","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2012-02-18"}],"displaytype":"detail","filename":"kkb-032-001.pdf","filesize":[{"value":"3.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-032-001.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/1024/files/kkb-032-001.pdf"},"version_id":"e88a9d69-7fed-48eb-9f01-a1a1da3f9240"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"magnetic semiconductor (MS)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"exchange interaction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"coherent potential approximation (CPA)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"impurity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"defect","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"磁性半導体中の格子欠陥","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"磁性半導体中の格子欠陥","subitem_title_language":"ja"},{"subitem_title":"Defect electron states in magnetic semiconductors","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["122"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"1024","relation_version_is_last":true,"title":["磁性半導体中の格子欠陥"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:16:21.321837+00:00"}