{"created":"2023-05-15T12:25:45.015602+00:00","id":1067,"links":{},"metadata":{"_buckets":{"deposit":"b9795283-a75d-40f7-9426-fbfa6d9de08f"},"_deposit":{"created_by":4,"id":"1067","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"1067"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00001067","sets":["2:16:42:125"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"66","bibliographicPageStart":"63","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Passivation effects of AlOx films were investigated for p-type crystalline Si for solar calls. AlOx films were deposited by catalytic chemical vapor deposition (Cat-CVD) using tri-methyl aluminum (TMA) and molecular oxygen (02) mixture. Surface recombination velocities at the interface of AlOx/Si was measured to be below 10-6 crn/s for AlOx films deposited with 02'TMA gas flow-rate ratios of 15 to 35. The extremely small S。wasmainly accomplished by the band bending due to negative fixed charge of an order of 1012cm-2 and by the assist due to the decrease of the interface trapping density Dit in accompany with negative fixed charge","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00001060","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12669200","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"立原, 誠之","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"會澤, 洋太朗","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"齋藤, 直之","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Tachihara, Masayuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ogita, Yoh-Ichiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Aizawa, Yotaro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Saito, Naoyuki","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2012-03-03"}],"displaytype":"detail","filename":"kkb-035-011.pdf","filesize":[{"value":"980.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-035-011.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/1067/files/kkb-035-011.pdf"},"version_id":"48fffa10-022f-4ed7-bdb1-21e1f7386233"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Aluminum oxide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Cat-CVD","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Passivation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Surface recombination velocity","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"太陽電池セルp 形Si 用アルミナパッシベーション膜のCat-CVD 法による作製とその評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"太陽電池セルp 形Si 用アルミナパッシベーション膜のCat-CVD 法による作製とその評価","subitem_title_language":"ja"},{"subitem_title":"Preparation of alumina passivation-films in p-Si for solar cells by catalytic chemical vapor deposition and its evaluation","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["125"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"1067","relation_version_is_last":true,"title":["太陽電池セルp 形Si 用アルミナパッシベーション膜のCat-CVD 法による作製とその評価"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:20:20.393643+00:00"}