{"created":"2023-05-15T12:25:45.292568+00:00","id":1071,"links":{},"metadata":{"_buckets":{"deposit":"cd01419f-39af-462b-b74b-a5c29865d5e7"},"_deposit":{"created_by":4,"id":"1071","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"1071"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00001071","sets":["2:16:42:125"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"39","bibliographicPageStart":"37","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"MgO thin films were prepared on quartz glass substrates by RF magnetron sputtering using a MgO target. The secondary electron emission coefficient for MgO thin films was examined in relation to substrate temperature and film thickness. The breakdown voltage for MgO thin films was measured by the V-Q Lissajous method. The determination of the secondary electron emission coefficient was based on the measured breakdown voltage and Townsend's breakdown criterion. It is found that the secondary electron emission coefficient has a maximum at the substrate temperature of about 500℃ and the film thickness of around 20nm.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00001064","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12669200","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三栖, 貴行","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"浪江, 正宗","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"後藤, みき","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荒井, 俊彦","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Misu, Takayuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Namie, Masamune","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Goto, Miki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Arai, Toshihiko","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2012-03-02"}],"displaytype":"detail","filename":"kkb-035-007.pdf","filesize":[{"value":"753.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-035-007.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/1071/files/kkb-035-007.pdf"},"version_id":"bef9cbc0-e1c9-426f-97a1-803699e4a485"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"MgO thin films","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"sputtering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Breakdown voltage","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"secondary electron emission coefficient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"cold cathode","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"スパッタ法によるMgO 薄膜電極の二次電子放出係数に及ぼす基板温度と膜厚の影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"スパッタ法によるMgO 薄膜電極の二次電子放出係数に及ぼす基板温度と膜厚の影響","subitem_title_language":"ja"},{"subitem_title":"Effect of substrate temperature and film thickness on the secondary electron coefficient of MgO thin film electrode by sputtering","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["125"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"1071","relation_version_is_last":true,"title":["スパッタ法によるMgO 薄膜電極の二次電子放出係数に及ぼす基板温度と膜厚の影響"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:20:30.197733+00:00"}