{"created":"2023-05-15T12:25:48.683480+00:00","id":1125,"links":{},"metadata":{"_buckets":{"deposit":"7c255c98-7a6d-4207-b687-6e889b031cfb"},"_deposit":{"created_by":4,"id":"1125","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"1125"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00001125","sets":["2:16:42:129"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"27","bibliographicPageStart":"23","bibliographicVolumeNumber":"39","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have studied the electronic, magnetic and transport properties of Gd-doped EuO and La-doped EuO. Gd is a magnetic impurity, while La is a nonmagnetic impurity. Applying the dynamical coherent potential approximation (Dynamical CPA) to simple models, we have calculated the electronic resistivity. We have also discussed about the effect of the electron screening which weakens an attractive potential on an impurity ion. The present result strongly suggests that, when doping density is as higher as 5% the effect of electron screening is so strong that the transport property does not significantly depend on the impurity species.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00001118","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12669200","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"21882878","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 正雄","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Takahashi, Masao","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2015-04-30"}],"displaytype":"detail","filename":"kkb-039-006.pdf","filesize":[{"value":"3.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-039-006.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/1125/files/kkb-039-006.pdf"},"version_id":"f308aa4c-2ab9-4f7b-ad96-489bd8691fe9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"magnetic semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"exchange interaction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"coherent potential approximation (CPA)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"electron-doped EuO","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Gd-doped EuO","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"La-doped EuO","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Gd-doped EuOとLa-doped EuOの電気抵抗","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Gd-doped EuOとLa-doped EuOの電気抵抗","subitem_title_language":"ja"},{"subitem_title":"Electronic resistivity of La-doped EuO and Gd-doped EuO.","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["129"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"1125","relation_version_is_last":true,"title":["Gd-doped EuOとLa-doped EuOの電気抵抗"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:26:14.103643+00:00"}