{"created":"2023-05-15T12:25:49.372414+00:00","id":1135,"links":{},"metadata":{"_buckets":{"deposit":"18089785-1a4e-4124-9ac2-b0f1dfdd54d7"},"_deposit":{"created_by":4,"id":"1135","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"1135"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00001135","sets":["2:16:42:130"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"6","bibliographicPageStart":"1","bibliographicVolumeNumber":"40","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"By applying the coherent potential approximation (CPA) to simple models, we have studied the temperature (T) dependence of the normalized magnetization M(T) and electrical resistivity ρ(T) of rare-earth-doped EuO. The present result reveals that in degenerate EuO, the Coulomb attraction between a donor electron and an impurity center is so well-screened that the magnetization is described by a Electron-doped EuO model. The strong double-dome feature of M(T) of Gd-doped EuO is a consequence of half-metallicity and low dopant activation resulting from less than one electron being donated per Gd atom. In degenerate EuO, the temperature dependence of the resistivity is well described as ρ(T) = ρC + ρm(M), where the ρC is the nonmagnetic scattering contribution (independent of T) and ρm(M) is the magnetic scattering contribution due to the exchange interaction with localized f spins. The screening effect considerably reduces the difference in M(T) and ρ(T) between Gd- and La-doped EuO.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00001128","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12669200","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"21882878","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 正雄","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Takahashi, Masao","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-04-06"}],"displaytype":"detail","filename":"kkb-040-001.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-040-001.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/1135/files/kkb-040-001.pdf"},"version_id":"cb4b66b0-530b-4d67-95b4-47e4bf5e37fd"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"magnetic semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"exchange interaction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"coherent potential approximation (CPA)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Electron-doped EuO","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Gd-doped EuO","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"La-doped EuO","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"縮退系磁性半導体の磁性と伝導","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"縮退系磁性半導体の磁性と伝導","subitem_title_language":"ja"},{"subitem_title":"Magnetic and transport properties of degenerate ferromagnetic semiconductors","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["130"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"1135","relation_version_is_last":true,"title":["縮退系磁性半導体の磁性と伝導"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:27:35.294377+00:00"}