{"created":"2023-05-15T12:25:31.525165+00:00","id":819,"links":{},"metadata":{"_buckets":{"deposit":"9e433a94-dcac-42ab-803d-528f25c7eb71"},"_deposit":{"created_by":4,"id":"819","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"819"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000819","sets":["2:16:41:112"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"77","bibliographicPageStart":"73","bibliographicVolumeNumber":"22","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The photoconductivity amplitude (PCA) signals and initiai carrier lifetimes are measured for characterizing subsurface damages in Si wafers with various polishing surface, using UV/millimeter-wave technique. The correlation between the initial region carrier lifetimes, surface micro roughness Rms, heavy metals contamination, PCA signals, and pulse photoconductivity\namplitude (PPCA) leads that the initial carrier lifetime characterizes well subsurface damages introduced by mirror polishing.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000812","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"篠原, 洋","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Shinohara, Hiroshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ogita, Yo-ichiro","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-022-013.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-022-013.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/819/files/kkb-022-013.pdf"},"version_id":"9cb1443c-da4b-4cbf-854e-16eeacc5cf10"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Photoconductivity amplitude","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Carrier lifetime","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Subsurface damage","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Surface microroughness\\nUV","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Millimeter wave","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Ph otoconductivity decay","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Silicon wafer","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"UV/ミリ波光導電法によるシリコンウェーハ研磨時表面/表面層の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"UV/ミリ波光導電法によるシリコンウェーハ研磨時表面/表面層の評価","subitem_title_language":"ja"},{"subitem_title":"Surface/Subsurface Characterization of Polishing Silicon Wafers with UV/Millimeter-wave Photoconductivity Technique","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["112"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"819","relation_version_is_last":true,"title":["UV/ミリ波光導電法によるシリコンウェーハ研磨時表面/表面層の評価"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-18T03:24:02.136701+00:00"}