{"created":"2023-05-15T12:25:31.937714+00:00","id":825,"links":{},"metadata":{"_buckets":{"deposit":"d9b4935c-024c-45a2-a4f4-df2e1711c148"},"_deposit":{"created_by":4,"id":"825","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"825"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000825","sets":["2:16:41:112"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"222","bibliographicPageStart":"213","bibliographicVolumeNumber":"22","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Applying the single-site approximation to the s-f model, the electrical resistivity in a degenerate\nferromagnetic semiconductor is studied theoretically. It is revealed that in the weak\nexchange-interaction limit, the resistivity of the up-spin electron agrees with that obtained by\nthe Born approximation, while the resistivity of the down-spin electron retains a finite value\neven at T = 0, which is due to the spin-flip scattering process. The density of states and\nelectrical resistivity for the strong exchange-interaction limit are also calculated. The results\nof electrical resistivity show a similar temperature and magnetic field dependence for a wide\nrange of exchange-interaction strengths.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000818","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 正雄","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Takahashi, Masao","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-022-032.pdf","filesize":[{"value":"3.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-022-032.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/825/files/kkb-022-032.pdf"},"version_id":"2218bf6f-31ad-4e9b-98ab-b8972c58a0ac"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"s-f model, electrical resistivity, magnetoresistance, magnetic semiconductor, EuS, double exchange\\ninteraction","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical Resistivity due to s-f Exchange Interaction in Degenerate Ferromagnetic Semiconductors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical Resistivity due to s-f Exchange Interaction in Degenerate Ferromagnetic Semiconductors","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["112"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"825","relation_version_is_last":true,"title":["Electrical Resistivity due to s-f Exchange Interaction in Degenerate Ferromagnetic Semiconductors"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-18T03:24:15.261975+00:00"}