{"created":"2023-05-15T12:25:32.136354+00:00","id":828,"links":{},"metadata":{"_buckets":{"deposit":"2f4fe49d-9e9e-4b3d-a5db-c65080675919"},"_deposit":{"created_by":4,"id":"828","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"828"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000828","sets":["2:16:41:112"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"94","bibliographicPageStart":"91","bibliographicVolumeNumber":"22","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The behavior of CF radical in CF,/H,pl asma was studied as af unction of the fluoroca巾onfilm tltickness\ngrown on the inner wall in DCp ulsed CF,/H,di scharge plasma.La ser-induced fluorescence was\nused to exantine the temporal behavior and radial distribution of CF radical density. The tltickness of\nfluoroca巾onfilms grown on the inner wall of the discharge tube was measured to investigate the influence\nof fluorocabon film formation on CF radical density in the plasma. It was found that tl1e CF\nradical density increased with increasing film tltickhess,and that the radial distribution of CF radical\ndensity changed to uniform profile.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000821","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"眞篠, 聡一","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"堀越, 恵太","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"後藤, みき","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荒井, 俊彦","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Mashino, Souichi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Horikoshi, Keita","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Goto, Miki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Arai, Toshihiko","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-022-015.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-022-015.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/828/files/kkb-022-015.pdf"},"version_id":"ebc6b032-65b4-4f8d-aca2-0a11817db6c5"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"C F radical, fluorocaibon, etching plasma,su rface reaction, laser induced fluorescence","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"半導体プロセス用CF4/H2プラズマ中のCFラジカルの挙動","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"半導体プロセス用CF4/H2プラズマ中のCFラジカルの挙動","subitem_title_language":"ja"},{"subitem_title":"Behavior of CF Radical in a CF4/H2 Plasma Used for Semiconductor Processing","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["112"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"828","relation_version_is_last":true,"title":["半導体プロセス用CF4/H2プラズマ中のCFラジカルの挙動"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-18T03:24:24.283461+00:00"}