{"created":"2023-05-15T12:25:33.122355+00:00","id":849,"links":{},"metadata":{"_buckets":{"deposit":"203fabf8-5e8b-4ffc-819d-bad6de33edfe"},"_deposit":{"created_by":4,"id":"849","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"849"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000849","sets":["2:16:41:113"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"43","bibliographicPageStart":"39","bibliographicVolumeNumber":"23","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"UV/mm-wave PCD technique is examined by characterizing Si wafer subsurface damages induced by H2+ ion implantation. PCA signals well reflects to the subsurface damage corresponding to H2+ implanted quantity of 1x1015cm-2 to 7x1016cm-2 in round of 0.23μm depth.The damage in subsurface (0.18~0.23μm) is well reflected by PCA signals. UV/mm-wave PCD technique is confirmed to reveal the subsurface damage within a quarter micron depth of Si wafers.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000842","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小林, 謙一","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"近藤, 英之","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"加藤, 健夫","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Kobayashi, Ken-ichi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ogita, Yo-ichiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kondo, Hideyuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Katoh, Takeo","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-023-007.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-023-007.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/849/files/kkb-023-007.pdf"},"version_id":"1a36764c-ba4f-4cc7-b090-bdf635d3a99b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Si wafer","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Subsurface characterization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"PCA","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Hydrogen ion implantation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"PCD","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Millimeter-wave","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"水素イオン注入Siウェーバ表面層のPCAによる評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"水素イオン注入Siウェーバ表面層のPCAによる評価","subitem_title_language":"ja"},{"subitem_title":"Surface Characterization of H2+ Impianted Silicon Wafers Using Photoconductivity Amplitude","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["113"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"849","relation_version_is_last":true,"title":["水素イオン注入Siウェーバ表面層のPCAによる評価"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:00:34.601613+00:00"}