{"created":"2023-05-15T12:25:33.567490+00:00","id":858,"links":{},"metadata":{"_buckets":{"deposit":"6b129f60-7853-42e7-a917-09a6975c51ae"},"_deposit":{"created_by":4,"id":"858","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"858"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000858","sets":["2:16:41:113"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"48","bibliographicPageStart":"45","bibliographicVolumeNumber":"23","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Electron-beam exited carrier profiles in Si wafer subsurface are calculated analytically. Carrier profiles can be induced within 1μm using acceleration voltage <3.5 keV. Spatial resolution of 0.1μm and 0.2μm can be obtained using an electron-beam with a pulse-width of 0.01ns and 0.1ns, respectively. The electron-beam excitation is enable to characterize properties in a subsurface within 1μm of silicon wafers.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000851","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 謙孝","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Sasaki, Kanetaka","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ogita, Yo-ichiro","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-023-008.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-023-008.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/858/files/kkb-023-008.pdf"},"version_id":"16c99214-c855-45a5-b759-0c5aef7c3193"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Electron-beam","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Subsurface characterization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Subsurface damage","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Conductivity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si wafer","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"電子ビームを用いたSiウェーハ表面層評価法の検討","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"電子ビームを用いたSiウェーハ表面層評価法の検討","subitem_title_language":"ja"},{"subitem_title":"A Method on Subsurface Characterization of Silicon Wafers Using Electron Beam","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["113"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"858","relation_version_is_last":true,"title":["電子ビームを用いたSiウェーハ表面層評価法の検討"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:00:51.929681+00:00"}