{"created":"2023-05-15T12:25:34.438818+00:00","id":874,"links":{},"metadata":{"_buckets":{"deposit":"823986d1-0a27-49d1-9ec4-ae37a98a11eb"},"_deposit":{"created_by":4,"id":"874","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"874"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000874","sets":["2:16:41:114"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"51","bibliographicPageStart":"45","bibliographicVolumeNumber":"24","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"H+ ion implanted damage in a subsurface of Si wafers and its depth profile has been characterized by pulse photoconductivity amplitude (PPCA) measured with blue-laser photoexitation and microwave reflection. PPCA signals decreased with increasing of implantation dose of H+ as well as decrease of photoconductivity amplitude (PCA) measured by UV photoexicitation / millimeter wave detection. PPCA well reflected the damage profile as well as PCA signs and haze signals simultaneously obtained by a light scattering method.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000867","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"黒川, 昌毅","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"加藤, 健夫","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"近藤, 英之","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Kurokawa, Masaki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ogita, Yo-ichiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Katoh, Takeo","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kondo, Hideyuki","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-024-007.pdf","filesize":[{"value":"2.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-024-007.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/874/files/kkb-024-007.pdf"},"version_id":"e874202e-2674-4830-a42a-b9a6be04e57d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Si wafer","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"PPCA signal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Subsurface characterization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"H+ ion implantation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Haze","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Si表面層H+イオン注入ダメージのパルス光導電振幅(PPCA)による評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Si表面層H+イオン注入ダメージのパルス光導電振幅(PPCA)による評価","subitem_title_language":"ja"},{"subitem_title":"Pulse Photoconductivity Amplitude(PPCA)Characterization of Silicon Subsurface Damage Induced by H+ Implantation","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["114"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"874","relation_version_is_last":true,"title":["Si表面層H+イオン注入ダメージのパルス光導電振幅(PPCA)による評価"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:02:48.132261+00:00"}