{"created":"2023-05-15T12:25:35.180926+00:00","id":887,"links":{},"metadata":{"_buckets":{"deposit":"31f67255-49b8-4798-b32e-ee3b6c9a2a8e"},"_deposit":{"created_by":4,"id":"887","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"887"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000887","sets":["2:16:41:114"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"61","bibliographicPageStart":"57","bibliographicVolumeNumber":"24","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Detection of defect profile in near surface of Si wafers using an electron beam has been considered with theoretical calculation in order to develop new characterization technique of near surface. Conductivity change induced by carrier excitation electron beam has been calculated based on using two and three layer model under various pulse-width and acceleration energy of the electron beam. Defect profile with 0.1μm can be characterized the pulse-width smaller than 100 ps. The tomography of near surface within Si wafer has been brought by the technique.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000880","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 謙孝","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Sasaki, Kanetaka","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ohtani, Kiyoshi","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-024-009.pdf","filesize":[{"value":"2.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-024-009.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/887/files/kkb-024-009.pdf"},"version_id":"c60e4645-f6d6-4870-8a52-c2d784266ff7"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Electron-beam","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Subsurface characterization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Subsurface damage","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Conductivity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si wafe","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"電子ビームによるシリコン表面層のトモグラフィの検討","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"電子ビームによるシリコン表面層のトモグラフィの検討","subitem_title_language":"ja"},{"subitem_title":"A Study on Tomography of Silicon Subsurface with Electron Beam","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["114"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"887","relation_version_is_last":true,"title":["電子ビームによるシリコン表面層のトモグラフィの検討"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:03:14.157096+00:00"}