{"created":"2023-05-15T12:25:36.122133+00:00","id":904,"links":{},"metadata":{"_buckets":{"deposit":"115d02b9-38e7-4e23-bbf6-204c3c1964d4"},"_deposit":{"created_by":4,"id":"904","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"904"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000904","sets":["2:16:41:115"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"52","bibliographicPageStart":"49","bibliographicVolumeNumber":"25","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Reactive ion etching (RIE) of chemical vapor deposition (CVD) diamond thin films has been investigated in depth in O2 gas plasma mixed with CF4 and electrodes distance. The optical emission spectrum of the RF plasma was monitored to explore the etching mechanisms. The large etch rate is obtained by using O2/10-20%CF4 at electrodes distance of 1.5cm, RF power of 100W, O2 flow rate of 20sccm, total pressure of 20Pa plasma conditions. The emission intensity of O has a peak around O2/10-20%CF4. The results of etch rate and emission intensity agree well with each other.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000897","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"竹村, 浩","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"三栖, 貴行","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"後藤, みき","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荒井, 俊彦","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Takemura, Hiroshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Misu, Takayuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Goto, Miki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Arai, Toshihiko","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-025-008.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-025-008.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/904/files/kkb-025-008.pdf"},"version_id":"2adb5272-f833-4e5e-8c96-6174343c69a9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"reactive ion etching","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"diamond","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"O2/CF4 plasma","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"O2/CF4プラズマ中のCVDダイヤモンド薄膜の反応性イオンエッチング","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"O2/CF4プラズマ中のCVDダイヤモンド薄膜の反応性イオンエッチング","subitem_title_language":"ja"},{"subitem_title":"Reactive Ion Etching of CVD Diamond Thin Films in O2/CF4 Plasma","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["115"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"904","relation_version_is_last":true,"title":["O2/CF4プラズマ中のCVDダイヤモンド薄膜の反応性イオンエッチング"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:05:08.638537+00:00"}