{"created":"2023-05-15T12:25:37.759450+00:00","id":933,"links":{},"metadata":{"_buckets":{"deposit":"6520ac10-cf15-4ea4-887f-d3b4162a99f7"},"_deposit":{"created_by":4,"id":"933","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"933"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000933","sets":["2:16:41:116"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"123","bibliographicPageStart":"119","bibliographicVolumeNumber":"26","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Applying the coherent potential approximation (CPA) with the t matrix elements to diluted magnetic semiconductors (DMS) of A 1-x Mn x B type, we calculate the density of states and the optical absorption edge in DMS's. Based on these numerical results, we evaluate the approximate expression for the band edge energy. In the appendix, we show a comparison between the approximate solution and the exact one for band edge energy of magnetic semiconductors.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000926","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 正雄","creatorNameLang":"ja"},{"creatorName":"Takahashi, Masao","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"小瀧, 正則","creatorNameLang":"ja"},{"creatorName":"Kotaki, Masanori","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"渋井, 貴哲","creatorNameLang":"ja"},{"creatorName":"Shibui, Takaaki","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-026-019.pdf","filesize":[{"value":"2.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-026-019.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/933/files/kkb-026-019.pdf"},"version_id":"7de6b16e-8991-4bac-a0d7-cb8e06111953"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"diluted magnetic semiconductor (DMS)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"exchange interaction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"coherent potential approximation (CPA)","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"希薄磁性半導体の状態密度、光学吸収端およびバンド端の磁性イオンモル濃度依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"希薄磁性半導体の状態密度、光学吸収端およびバンド端の磁性イオンモル濃度依存性","subitem_title_language":"ja"},{"subitem_title":"Magnetie Ion Mole Fraction Dependency of the Density of States, Optical Absorption Edges and Band Edges in Diluted Magnetic Semiconductors","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["116"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"933","relation_version_is_last":true,"title":["希薄磁性半導体の状態密度、光学吸収端およびバンド端の磁性イオンモル濃度依存性"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2025-06-13T10:17:21.074727+00:00"}