{"created":"2023-05-15T12:25:38.025222+00:00","id":939,"links":{},"metadata":{"_buckets":{"deposit":"a9451dae-11d6-418c-8878-9d43a2b5cc5c"},"_deposit":{"created_by":4,"id":"939","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"939"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000939","sets":["2:16:41:117"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"11","bibliographicPageStart":"7","bibliographicVolumeNumber":"27","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have developed a catalytic chemical vapor deposition (Cat-CVD) method to deposit alumina thin films on a silicon crystal using N2 bubbled tri-methyl aluminum ((CH3)3Al,TMA) and molecule oxygen (O2) as source species and a tungsten wire as a catalyzer. The tungsten catalyzer decomposed TMA at about 600°C. The typical deposition rate was 18 nm/min for catalyzer temperature of 1000°C and substrate temperature of 800℃ and 6.5nm/min for substrate temperature of 400℃ MIS diodes were fabricated with the alumina gate on 32.5 nm thick amorphous film deposited at substrate temperature of 400°C. The capacitance measurement resulted in a relative dielectric constant of 7.4, fixed charge density of 1.74X 1012cm-2,a slight hysteresis voltage as 0.12V and very few interface trapping charges. The leakage current was 5.01 X1 0-7 A/cm2 at bias voltage of 1V.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000932","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"家原, 清志","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"冨田, 寿行","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Iehara, Shinshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ogita, Yo-ichiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Tomita, Toshiyuki","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-027-002.pdf","filesize":[{"value":"2.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-027-002.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/939/files/kkb-027-002.pdf"},"version_id":"963b87c4-583e-4e27-8bbc-3a9df0ba689d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Cat-CVD","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"High-k","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Alumina","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Al2O3","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Interface trap density","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Fixed charge density","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"MOS diode","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"C-V characteristics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"I-V characteristics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Leakage current","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Cat-CVDアルミナMISゲートの作製と特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Cat-CVDアルミナMISゲートの作製と特性","subitem_title_language":"ja"},{"subitem_title":"Fabrication of Alumina MIS Gate with Cat-CVD and Its Characteristics Measurement","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["117"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"939","relation_version_is_last":true,"title":["Cat-CVDアルミナMISゲートの作製と特性"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-25T06:40:12.914410+00:00"}