{"created":"2023-05-15T12:25:39.271577+00:00","id":960,"links":{},"metadata":{"_buckets":{"deposit":"25fe6f97-441a-4dc5-982a-a3fe7f72fbcc"},"_deposit":{"created_by":4,"id":"960","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"960"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000960","sets":["2:16:41:118"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"49","bibliographicPageStart":"45","bibliographicVolumeNumber":"28","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have investigated a dissociation of tri-methyl aluminum ((CH3)3Al,TMA) mixed with molecular oxygen (O2) dissociated by a tungsten hot wire in a catalytic chemical vapor deposition (Cat-CVD) method to deposit alumina thin films on a silicon crystal. The analysis was performed by a QMS (Quadrupole mass spectrometer). The dissociation of O2 was caused at about 900℃ for only O2 gas atmosphere and TMA at about 500℃ Dissociation of O2 mixed with TMA was caused at about 500℃ lower than 900℃. The temperature coincided with the temperature of 500℃ to abruptly grow Al2O3 on a Si crystal.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000953","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"冨田, 寿行","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Tomita, Toshiyuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ogita, Yoh-Ichiro","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-028-008.pdf","filesize":[{"value":"2.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-028-008.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/960/files/kkb-028-008.pdf"},"version_id":"df622354-28f8-4407-9740-c5cd5604ec31"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"High-k MOS","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"High-k gate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"High-k insulator","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Cat-CVD","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Alumina","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Al2O3","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Quadrupole mass spectrometer","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Mass spectrum","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"TMA dissociation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Catalytic-CVDによるSi上アルミナ生成におけるTMA/O2分解の質量分析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Catalytic-CVDによるSi上アルミナ生成におけるTMA/O2分解の質量分析","subitem_title_language":"ja"},{"subitem_title":"Mass Spectrometry of TMA/O2 Dissociation in Alumina Preparation on Silicon with Catalytic Chemical Vapor Deposition","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["118"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"960","relation_version_is_last":true,"title":["Catalytic-CVDによるSi上アルミナ生成におけるTMA/O2分解の質量分析"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:10:25.084425+00:00"}