{"created":"2023-05-15T12:25:39.412740+00:00","id":963,"links":{},"metadata":{"_buckets":{"deposit":"f4bf940a-d21a-4d1d-a5d9-a22d9bfbb64e"},"_deposit":{"created_by":4,"id":"963","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"963"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000963","sets":["2:16:41:118"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"58","bibliographicPageStart":"55","bibliographicVolumeNumber":"28","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Diamond films were etched using a reactive ion etching system in O2/CF4 plasma with narrow electrode gap. The maximum etching rate was obtained with the addition of 20%CF4 in O2 under conditions that the RF power was 100W, the gas pressure 20Pa and the total flow rate 20sccm. Langmuir probe and actinometry technique were used to detennine the plasma parameter. The electron temperature and O density had a peak around O2/20%CF4","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000956","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三栖, 貴行","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"後藤, みき","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"荒井, 俊彦","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Misu, Takayuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Goto, Miki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Arai, Toshihiko","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-028-010.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-028-010.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/963/files/kkb-028-010.pdf"},"version_id":"cfebae75-eacd-4d65-bf9f-e1ae6bef1bfb"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"reactive ion etching","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"diamond","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"anisotropic etching","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"O2/CF4 plasma","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"O2/CF4プラズマによるダイヤモンドエッチングとプラズマパラメータ","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"O2/CF4プラズマによるダイヤモンドエッチングとプラズマパラメータ","subitem_title_language":"ja"},{"subitem_title":"Etching of Diamond and Plasma Parameters in O2/CF4 Plasma","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["118"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"963","relation_version_is_last":true,"title":["O2/CF4プラズマによるダイヤモンドエッチングとプラズマパラメータ"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:10:30.055832+00:00"}