{"created":"2023-05-15T12:25:41.114648+00:00","id":997,"links":{},"metadata":{"_buckets":{"deposit":"2df60e52-cf4d-4f6e-829b-68130b00ab7a"},"_deposit":{"created_by":4,"id":"997","owners":[4],"pid":{"revision_id":0,"type":"depid","value":"997"},"status":"published"},"_oai":{"id":"oai:kait.repo.nii.ac.jp:00000997","sets":["2:16:41:120"]},"author_link":[],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-03-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"31","bibliographicPageStart":"25","bibliographicVolumeNumber":"30","bibliographic_titles":[{"bibliographic_title":"神奈川工科大学研究報告.B,理工学編"}]}]},"item_10002_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A minority-carrier diffusion coefficient for silicon-crystal wafers is demonstrated to express experimental data and to adapt to useful applications. Doping density dependent minority-carrier mobility for Si crystals is theoretically developed along Klaassen scattering model. The model with parameters taken to fit to experimental data revels to well represent the dependence of doping concentration to 1020cm-3 for an n-type Si crystal and 1018cm-3 for a p-type one. A simple formula which represents doping density dependence of a minority-carrier mobiljty was newly deduced from the formula to represent the dependence for majority-carrier mobility. The simple formula proposed represents well the dependence of doping concentration to 1020 cm-3 for an n-type Si crystal and 1018cm-3 for a p-type one. Also is shown the simple formula to show doping density dependence of a minority-carrier diffusion coefficient modified from the above simple function for mobility is proposed to be useful in an application to carrier transport calculation with diffusion process in Si crystal wafers.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.34411/00000990","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川工科大学"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10074179","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09161902","subitem_source_identifier_type":"PISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"荻田, 陽一郎","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Ogita, Yo-ichiro","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"kkb-030-005.pdf","filesize":[{"value":"2.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kkb-030-005.pdf","objectType":"fulltext","url":"https://kait.repo.nii.ac.jp/record/997/files/kkb-030-005.pdf"},"version_id":"cd6b966d-ad82-4552-9239-67e373a05e92"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Minority-carrier diffusion coefficient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Minority-carrier mobility","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si wafers","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Impurity scattering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Electron-hole scattering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Carrier transportation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Carrier lifetime","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Siウェーハの少数キャリヤ拡散係数","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Siウェーハの少数キャリヤ拡散係数","subitem_title_language":"ja"},{"subitem_title":"Minority Carrier Diffusion Coefficient in Si Wafers","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"4","path":["120"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"997","relation_version_is_last":true,"title":["Siウェーハの少数キャリヤ拡散係数"],"weko_creator_id":"4","weko_shared_id":-1},"updated":"2023-08-04T09:13:41.622222+00:00"}